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| Si7405DN Vishay Siliconix P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.016 @ VGS = - 4.5 V - 12 0.022 @ VGS = - 2.5 V 0.028 @ VGS = - 1.8 V FEATURES ID (A) - 13 - 11 - 9.8 D TrenchFETr Power MOSFETS: 1.8-V Rated D New PowerPAKr Package - Low Thermal Resistance, RthJC - Low 1.07-mm Profile APPLICATIONS D Load Switch D Power Switch D PA Switch S SS PowerPAK 1212-8 3.30 mm S 1 2 S 3 S 3.30 mm 4 D 8 7 D 6 D 5 D G G P-Channel MOSFET Bottom View Ordering Information: SI7405DN-T1 DD DD ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State - 12 "8 Unit V - 13 - 9.4 - 30 - 3.2 3.8 2.0 - 55 to 150 - 8.3 - 6.0 A - 1.3 1.5 0.8 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71424 S-31989--Rev. B, 13-Oct-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 26 65 1.9 Maximum 33 81 2.4 Unit _C/W C/W 1 Si7405DN Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = - 2 mA VDS = 0 V, VGS = "8 V VDS = - 12 V, VGS = 0 V VDS = - 12 V, VGS = 0 V, TJ = 85_C VDS v - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 13 A Drain-Source On-State Resistancea rDS(on) VGS = - 2.5 V, ID = - 11 A VGS = - 1.8 V, ID = - 3 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = - 6 V, ID = - 13 A IS = - 3.2 A, VGS = 0 V - 30 0.013 0.018 0.022 35 - 0.7 - 1.2 0.016 0.022 0.028 S V W - 0.45 "100 -1 -5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = - 3.2 A, di/dt = 100 A/ms VDD = - 6 V, RL = 6 W ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W VDS = - 6 V, VGS = - 4.5 V, ID = - 13 A 35 6.6 7.7 25 50 175 150 30 40 75 260 225 60 ns 50 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 30 25 20 15 10 5 Output Characteristics VGS = 5 thru 2 V 30 25 20 15 10 Transfer Characteristics I D - Drain Current (A) 1.5 V I D - Drain Current (A) TC = 125_C 5 25_C - 55_C 1V 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) www.vishay.com 0 0.0 0.4 0.8 1.2 1.6 2.0 VGS - Gate-to-Source Voltage (V) Document Number: 71424 S-31989--Rev. B, 13-Oct-03 2 Si7405DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.05 On-Resistance vs. Drain Current 6000 5000 C - Capacitance (pF) 4000 3000 2000 1000 0 Capacitance r DS(on) - On-Resistance ( W ) 0.04 Ciss 0.03 VGS = 1.8 V VGS = 2.5 V 0.02 0.01 VGS = 4.5 V Coss Crss 0.00 0 5 10 15 20 25 30 0 2 4 6 8 10 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 5 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 13 A Gate Charge 1.4 1.3 1.2 1.1 1.0 0.9 0.8 - 50 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 13 A 3 2 1 0 0 8 16 24 32 40 Qg - Total Gate Charge (nC) r DS(on) - On-Resistance (W) (Normalized) 4 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.05 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.04 ID = 13 A 0.03 0.02 TJ = 25_C 0.01 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71424 S-31989--Rev. B, 13-Oct-03 www.vishay.com 3 Si7405DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.3 V GS(th) Variance (V) 0.2 0.1 0.0 - 0.1 - 0.2 - 50 10 ID = 2 mA 40 50 Single Pulse Power, Juncion-To-Ambient Power (W) 30 20 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 65_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (sec) 10 -1 1 www.vishay.com 4 Document Number: 71424 S-31989--Rev. B, 13-Oct-03 |
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